MRF6V2150NR1 MRF6V2150NBR1
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
50
1
1000
02010
30
40
VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
Figure 4. Capacitance versus Drain--Source Voltage
C, CAPACITANCE (pF)
Ciss
1
100
1
TC
=25°C
10
10
VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
Figure 5. DC Safe Operating Area
I
D
, DRAIN CURRENT (AMPS)
20 12040
60
80 100
5
0
DRAIN VOLTAGE (VOLTS)
Figure 6. DC Drain Current versus Drain Voltage
I
D
, DRAIN CURRENT (AMPS)
21
25
1
23
22
26
Pout, OUTPUT POWER (WATTS) CW
Figure 7. CW Power Gain versus Output Power
G
ps
, POWER GAIN (dB)
VDD
=50Vdc
f = 220 MHz
100
10
100
24
VGS
=3V
Coss
Crss
2.75 V
2.63 V
2.5 V
2.25 V
27
10 200100
-- 6 0
-- 1 0
5
Pout, OUTPUT POWER (WATTS) PEP
-- 2 5
-- 3 0
-- 3 5
-- 4 0
10 100
Figure 8. Third Order Intermodulation Distortion
versus Output Power
IMD, THIRD ORDER INTERMODULATION
DISTORTION (dBc)
VDD
= 50 Vdc, f1 = 220 MHz, f2 = 220.1 MHz
Two--Tone Measurements, 100 kHz Tone Spacing
-- 4 5
-- 5 0
32
48
58
22 2624
56
54
52
50
Pin, INPUT POWER (dBm)
Figure 9. CW Output Power versus Input Power
P
out
, OUTPUT POWER (dBm)
28 30
P3dB = 52.61 dBm (182.39 W)
Actual
Ideal
P1dB = 52.27 dBm (168.66 W)
VDD
=50Vdc,IDQ
= 450 mA
f = 220 MHz
200
3
2
1
0
563 mA
IDQ
= 675 mA
IDQ
= 225 mA
336 mA
Measured with
±30 mV(rms)ac @ 1 MHz
VGS
=0Vdc
4
450 mA
337 mA
225 mA
-- 5 5
-- 1 5
-- 2 0
450 mA
563 mA
685 mA
900 mA
300
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